HREM study of ion implantation in 6H-SiC at high temperatures

Journal of Electron Microscopy

Volumn 46, Issue 4, 1997, Pages 271-279

  Lebedev, O I ^a   Van Tendeloo, G ^a   Suvorova, A A ^b   Usov, I O ^b   Suvorov, A V ^c  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b IOFFE INSTITUTE   (Russian Federation)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

High temperature; High resolution electron microscopy; Ion implantation; Silicon carbide

Indexed keywords

ALUMINUM; HIGH RESOLUTION ELECTRON MICROSCOPY; ION IMPLANTATION;

HIGH DOSE; HIGH-RESOLUTION ELECTRON MICROSCOPY (HREM); HIGHEST TEMPERATURE; IMPLANTATION CONDITIONS; INTERSTITIALS; IONS IMPLANTATION; MATRIX; ORIENTATION RELATIONSHIP;

SILICON CARBIDE;

EID: 0030753569     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023520     Document Type: Article

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