Growth mode transition processes in a GaAs/InP system studied by scanning tunneling microscopy

Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 439-441

  Ohkouchi, Shunsuke ^a,b   Ikoma, Nobuyuki ^a   Tamura, Masao ^a  

^a Optoelectronics Technology Research Laboratory   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

GaAs; Heteroepitaxy; InP; Island formation; Lattice mismatched system

Indexed keywords

EID: 0642297447     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666617     Document Type: Article

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