Contribution of diffusion interstitial injection to gettering of metallic impurities in silicon

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages 361-362

  Gaiseanu F ^a,b   Schroter W ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b Research Institute for Electronics Bucharest   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; COBALT; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); GOLD; IMPURITIES; MATHEMATICAL MODELS; METALLIC COMPOUNDS; PHOSPHORUS;

DIFFUSION GETTERING; DIFFUSION INTERSTITIAL INJECTION; DOPING IMPURITIES; GETTERING MODEL; KICK OUT MECHANISM; METALLIC IMPURITIES; NONOXIDIZING CONDITIONS;

SEMICONDUCTING SILICON;

EID: 0029759795     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836437     Document Type: Article

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