High-temperature GaN/SiC heterojunction bipolar transistor with high gain

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 389-392

  Pankove, J ^a   Chang, S S ^a   Lee, H C ^a   Molnar, R J ^a   Moustakas, T D ^a   Van Zeghbroeck, B ^a  

^a Astralux Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN CONTROL; HIGH TEMPERATURE APPLICATIONS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL CONDUCTIVITY OF SOLIDS;

BASE TRANSPORT FACTOR; GALLIUM NITROGEN COMPOUNDS; HIGH TEMPERATURE HETEROJUNCTION BIPOLAR TRANSISTOR;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0028737610     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)