Influence of interface structure on chemical etching process for air gap of microelectromechanical system based on surface micromachining

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 7129-7133

  Yoon, Young Soo ^a,c   Kim, Joon Han ^a   Polla, Dennis L ^a   Shin, Young Hwa ^b  

^a 4 174 EE CSCI Building   (United States)

^b Gachon University   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

Chemical etching process; Interface; MEMS; PZT

Indexed keywords

EID: 0000410939     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.7129     Document Type: Article

References (9)

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5. J. H. Kim, Y. S. Yoon and D. L. Polla: Jpn. J. Appl. Phys. 37 (1998) 948.
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7. J. H. Kim, Y. S. Yoon and D. L. Polla: J. Korean Phys. Soc. 32 (1998) 1580.
8. Y. S. Yoon, H. J. Jung and Y. H. Shin: to be published in J. Korean Inst. Electical & Electron Mater. Eng. (1998).
9. J. H. Kim, L. Wang, S. M. Zum, L. Li, Y. S. Yoon and D. L. Polla: Integr. Ferroelectr. 15 (1997) 325.