Relaxation of band bending on GaAs(001) surface by controlling the crystal defects near the surface

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 619-623

  Hirota, Y ^a   Watanabe, Y ^a   Maeda, F ^a   Ogino, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Defects; Deoxygenated and deionized water treatment; GaAs(001) surface; Photoluminescence; Pinning of surface Fermi level

Indexed keywords

CRYSTAL DEFECTS; ETCHING; FERMI LEVEL; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; SYNCHROTRON RADIATION;

THERMALLY DEGRADED LAYERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031548147     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80153-5     Document Type: Article

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