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Volumn 82, Issue 6, 1997, Pages 2862-2868

Effects o Xf the defect structure on hydrogen transport in amorphous silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000344687     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366118     Document Type: Article
Times cited : (16)

References (25)
  • 13
    • 0030563566 scopus 로고    scopus 로고
    • W. Beyer, J. Non-Cryst. Solids 198-200, 40 (1996); Phys. Status Solidi A 159, 53 (1997).
    • (1996) J. Non-Cryst. Solids , vol.198-200 , pp. 40
    • Beyer, W.1
  • 14
    • 0030563566 scopus 로고    scopus 로고
    • W. Beyer, J. Non-Cryst. Solids 198-200, 40 (1996); Phys. Status Solidi A 159, 53 (1997).
    • (1997) Phys. Status Solidi A , vol.159 , pp. 53
  • 24
    • 7044223730 scopus 로고    scopus 로고
    • note
    • The situation may be in reality more complex than described here. Previous work has suggested that during annealing small H complexes may disappear, and larger complexes grow at the expense of the smaller ones.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.