Hydrogen solubility and network stability in amorphous silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 8, 1996, Pages 4415-4427

  Acco, S ^a   Williamson, D ^b  

^a FOM INSTITUTE AMOLF   (Netherlands)

^b Department of Geology and Geological Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000471307     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.4415     Document Type: Article

References (84)

1. A. H. Mahan, Y. Chen, D. L. Williamson, and G. D. Mooney, J. Non-Cryst. Solids 137&138, 65 (1991).
2. R. Bellissent, in Amorphous Silicon and Related Materials, edited by H. Fritzsche (World Scientific, Singapore, 1988), p. 93.
3. R. Biswas, I. Kwon, A. M. Bouchard, C. M. Soukoulis and G. S. Grest, Phys. Rev. B 39, 5101 (1989).
4. A. H. Mahan, D. L. Williamson, B. P. Nelson and R. S. Crandall, Solar Cells 27, 465 (1989).
5. P. D'Antonio and J. H. Konnert, in Tetrahedrally Bonded Amorphous Semiconductors, edited by R. A. Street, D. K. Biegelson, and J. C. Knight, AIP Conf. Proc. No. 73 (AIP, New York, 1981), p. 117.
6. A. J. Leadbetter, A. A. M. Rashid, N. Colenutt, A. F. Wright and J. C. Knight, Solid State Commun. 38, 957 (1981).
7. S. Guha, J. Yang, S. J. Jones, Y. Chen and D. L. Williamson, Appl. Phys. Lett. 61, 1444 (1992).
8. S. J. Jones, Y. Chen, D. L. Williamson, U. Kroll, and P. Roca i Cabarrocas, J. Non-Cryst. Solids 164-166, 131 (1993).
9. D. L. Williamson, in Amorphous Silicon Technology-1995, edited by M. Hack, E. A. Shiff, A. Madam, M. Powell, and A. Matsuda, MRS Symposia Proceedings No. 377 (Materials Research Society, Pittsburgh, 1995), p. 251.
10. J. Shinar, H. Jia, R. Shinar, Y. Chen and D. L. Williamson, Phys. Rev. B 50, 7358 (1994).
11. E. S. Machlin, Materials Science in Microelectronics, The Relationship Between Thin Film Processing and Structure (Giro, Croton-on-Hudson, 1995).
12. C. Manfredotti, F. Fizzotti, M. Boero, P. Pastorino, E. Vittone and V. Rigato, Phys. Rev. B 50, 18t046 (1994).
13. Y. Chen, S. J. Jones, D. L. Williamson, S. Yang, N. Maley, and J. R. Abelson, in Amorphous Silicon Technology—1992 (Ref. 12), p. 311.
14. A. H. Mahan, B. P. Nelson, S. Salomon, and R. S. Crandall, in Amorphous Silicon Technology—1991, edited by A. Madan, Y. Hamakawa, M. Thompson, P. C. Taylor, and P. G. Lecomber, MRS Symposia Proceedings No. 219 (Materials Research Society, Pittsburgh, 1991), p. 673.
15. P. Papadopulos, A. Scholz, S. Bauer, B. Schröder, and H. Oechsner, J. Non-Cryst. Solids 164-166, 87 (1993).
16. R. Zedlitz, F. Kessler, and M. Heintze, J. Non-Cryst. Solids 164-166, 83 (1993).
17. J. M. Poate, in Amorphous Silicon and Related Materials, edited by H. Fritzsche (World Scientific, Singapore, 1989), p. 149.
18. S. Roorda, W. C. Sinke, J. M. Poate, D. C. Jacobson, S. Dierker, B. S. Dennis, D. J. Eaglesham, F. Spaepen and P. Fuoss, Phys. Rev. B 44, 3702 (1991).
19. P. A. Stolk, F. W. Saris, A. J. M. Berntsen, W. F. van der Weg, L. T. Sealy, R. C. Barklie, G. Krötz and G. Müller, J. Appl. Phys. 75, 7266 (1994).
20. J. S. Custer, M. O. Thompson, D. C. Jacobson, J. M. Poate, S. Roorda, W. C. Sinke and F. Spaepen, Appl. Phys. Lett. 64, 437 (1994).
21. C. A. Volkert, J. Appl. Phys. 74, 7107 (1993).
22. D. L. Williamson, S. Roorda, M. Chicoine, R. Tabti, P. A. Stolk, S. Acco and F. W. Saris, Appl. Phys. Lett. 67, 226 (1995).
23. Small Angle X-ray Scattering, edited by O. Glatter and O. Kratky (Academic, New York, 1982).
24. V. Gerold, in Small-Angle X-Ray Scattering, edited by H. Brumeberger (Gordon and Breach, New York, 1967), p. 277.
25. M. H. Brodsky, M. Cardona and J. J. Cuomo, Phys. Rev. B 16, 3556 (1977).
26. A. A. Langford, M. L. Fleet and A. H. Mahan, Solar Cells 27, 373 (1989).
27. G. L. Olson and J. A. Roth, in Handbook of Crystal Growth, edited by D. T. J. Hurle (Elsevier/North-Holland, Amsterdam, 1994), Vol. 3, p. 255.
28. J. C. Oberlin, A. C. Chami, E. Ligeon and C. Prunier, Nucl. Instrum. Methods Phys. Res. Sect. B 19/20, 462 (1987).
29. L. H. Schwartz and J. B. Cohen, Diffraction from Materials (Springer, Berlin, 1987), p. 402.
30. A. Guiner and G. Fournet, Small-Angle Scattering of X-Rays (Wiley, New York, 1955).
31. G. Lucovsky, J. Non-Cryst. Solids 76, 173 (1985).
32. W. B. Pollard and G. Lucovsky, Phys. Rev. B 26, 3172 (1982).
33. G. Lucovsky and W. B. Pollard, in The Physics of Hydrogenated Amorphous Silicon II, edited by J. D. Jannopolus and G. Lucovsky (Springer, Berlin, 1984), p. 301.
34. H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond and S. Kalbitzer, Phys. Status Solidi 100, 43 (1980).
35. Y. F. Chen, Solid State Commun. 71, 1127 (1989).
36. K. K. Gleason, M. A. Petrich and J. A. Reimer, Phys. Rev. B 36, 3259 (1987).
37. J. Daey Owens and R. E. I. Schropp, in Amorphous Silicon Technology-1995 (Ref. 10), p. 419.
38. H.-G. Haubold and D. Martinsen, J. Appl. Crystallogr. 11, 592 (1978).
39. S. Chattopadhyay, S. N. Sharma, R. Banerjee, D. M. Bhusari, S. T. Kshirsagar, Y. Chen and D. L. Williamson, J. Appl. Phys. 76, 5208 (1994).
40. K. F. Heidemann, M. Gruner and E. Kaat, Radiat. Eff. 82, 103 (1984).
41. N. W. Ashcroft and J. Lekner, Phys. Rev. 145, 83 (1966).
42. C. G. Vonk, J. Appl. Crystallogr. 9, 433 (1976).
43. R. Triolo, E. Caponetti and S. Spooner, Phys. Rev. B 39, 4588 (1989).
44. Y. J. Chabal and C. K. N. Patel, Rev. Mod. Phys. 59, 835 (1987).
45. H. J. Stein and P. S. Peercy, Appl. Phys. Lett. 34, 604 (1979).
46. H. J. Stein and P. S. Peercy, Phys. Rev. B 22, 6233 (1980).
47. G. N. van den Hoven, Z. N. Liang, L. Niesen and J. S. Custer, Phys. Rev. Lett. 68, 3714 (1992).
48. Y. K. Park, S. K. Estreicher, C. W. Myles and P. A. Fedders, Phys. Rev. B 52, 1718 (1995).
49. W. E. Carlos and P. C. Taylor, Phys. Rev. B 25, 1435 (1982).
50. H. v. Löhneyesn, H. J. Schink and W. Beyer, Phys. Rev. Lett. 52, 549 (1984).
51. J. E. Graebner, B. Golding, L. C. Allen, D. K. Biegelsen and M. Stutzmann, Phys. Rev. Lett. 52, 553 (1984).
52. J. B. Boyce, S. E. Ready, M. Stutzmann and R. E. Norberg, J. Non-Cryst. Solids 114, 211 (1989).
53. R. A. Street, Physica B 170, 69 (1991).
54. P. V. Santos, N. M. Johnson, R. A. Street, M. Hack, R. Thompson and C. C. Tsai, Phys. Rev. B 47, 10t244 (1993).
55. D. E. Carlsson and C. W. Magee, Appl. Phys. Lett. 33, 81 (1978).
56. W. Beyer and H. Wagner, J. Appl. Phys. 53, 8745 (1982).
57. K. Böhringher, X. H. Liu and S. Kalbitzer, J. Phys. C 16, L1187 (1983).
58. W. Beyer (private communication).
59. S. Coffa and J. M. Poate, Appl. Phys. Lett. 59, 2296 (1991).
60. G. Luckovsky, Z. Zing, Z. Lu, D. R. Lee and J. L. Whitten, J. Non-Cryst. Solids 182, 90 (1995).
61. M. Nakamura, T. Ohno, K. Miyata, N. Konishi and T. Suzuki, J. Appl. Phys. 65, 3061 (1989).
62. A. Carnera (private communication).
63. A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford and N. Maley, Phys. Rev. B 45, 13t367 (1992).
64. M. A. Petrich, K. K. Gleason and J. A. Reimer, Phys. Rev. B 36, 9722 (1987).
65. S. Mitra, K. K. Gleason, H. Jia and J. Shinar, Phys. Rev. B 48, 2175 (1993).
66. M. Kemp and H. M. Branz, Phys. Rev. B 52, 13t946 (1995).
67. A. H. Mahan, E. J. Johnson, R. S. Crandall, and H. M. Branz, in Amorphous Silicon Technology-1995 (Ref. 10), p. 413.
68. C. C. Tsai and H. Fritzsche, Solar Energy Mater. 1, 29 (1979).
69. W. Beyer, in Tetrahedrally-Bonded Amorphous Semiconductors, edited by D. Adler and H. Fritzsche (Plenum, New York, 1985), p. 129.
70. S. Mantl, Mater. Sci. Rep. 8, 1 (1992).
71. J. E. Graebner, L. C. Allen and B. Golding, Phys. Rev. B 31, 904 (1985).
72. K. M. Jones (private communication).
73. P. C. Taylor, W. D. Ohlsen, C. Lee, and E. D. van der Heiden, in Hydrogen in Disordered and Amorphous Solids, edited by G. Bambakidis and R. C. Bowman (Plenum, New York, 1986), p. 91.
74. R. Rüther and J. Livingstone, Thin Solid Films 251, 30 (1994).
75. A. Polman, D. C. Jacobson, S. Coffa, J. M. Poate, S. Roorda and W. Sinke, Appl. Phys. Lett. 57, 1230 (1990).
76. S. Coffa, J. M. Poate, D. C. Jacobson and A. Polman, Appl. Phys. Lett. 58, 2916 (1991).
77. H. M. Branz, S. Asher, B. P. Nelson, and M. Kemp, in Amorphous Silicon Technology—1993, edited by E. A. Schiff, M. J. Thompson, A. Madan, K. Tanaka, and P. G. Lecomber, MRS Symposia Proceedings. No. 297 (Materials Research Society, Pittsburgh, 1993), p. 279.
78. W. B. Jackson, N. H. Nickel, N. M. Johnson, F. Pardo, and P. V. Santos, in Amorphous Silicon Technology—1994, edited by E. A. Schiff, M. Hack, A. Madan, M. Powell, and A. Matsuda, MRS Symposia Proceedings No. 336 (Materials Research Society, Pittsburgh, 1994), p. 311.
79. S. Coffa, F. Priolo and A. Battaglia, Phys. Rev. Lett. 70, 3756 (1993).
80. C. N. Waddel, W. G. Spitzer, J. E. Fredrikson, G. H. Hubler and T. A. Kennedy, J. Appl. Phys. 55, 4361 (1984).
81. N. H. Nickel and W. B. Jackson, Phys. Rev. B 51, 4872 (1995).
82. G. F. Cerofolini, L. Meda, R. Balboni, F. Corni, S. Fabbroni, G. Ottaviani, R. Tonini, M. Anderle and R. Canteri, Phys. Rev. B 46, 2061 (1992).
83. M. F. Beaufort, H. Garem and J. Lépinoux, Philos. Mag. A 69, 881 (1994).
84. S. Romani and J. H. Evans, Nucl. Instrum. Methods Phys. Res. Sect. B 44, 313 (1990).