Temperature dependence of the iron donor level in silicon at device processing temperatures

Applied Physics Letters

Volumn 76, Issue 19, 2000, Pages 2734-2736

  Kohno, H ^a,b   Hieslmair, H ^a   Istratov, A A ^a   Weber, E R ^a  

^a Lawrence Berkeley National Laboratory   (United States)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000245999     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126459     Document Type: Article

References (15)

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