Study of resist pattern roughness on 0.15 μ m KrF lithography

Journal of Photopolymer Science and Technology

Volumn 12, Issue 4, 1999, Pages 643-648

  Watanabe, Minoru ^a   Yabe, Sachiko ^a   Machida, Satoshi ^a   Taguchi, Takashi ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

0.15 m KrF Lithography; Chemically Amplified Resist; Residual Solvent; Resist Pattern Edge Roughness

Indexed keywords

EID: 0000225532     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.12.643     Document Type: Article

References (9)

1. H. Ito and C. G. Willson, Polymer Eng. Soc., Vol.23 (1983) 2012.
2. I. Satou, S. Yabe, M. Watanabe and T. Taguchi, Proc. SPIE, 3333 (1998) 820.
3. th Jpn.Appl.Phys.No.2, (1998) 586.
4. T. Yoshimura, H. Shiraishi, J. Yamamoto and S. Okazaki, Appl. Phys. Lett. 63 (1993) 764.
5. T. Yoshimura, H. Shiraishi, J. Yamamoto, T. Terasawa and S. Okazaki, Appl. Phys. Lett. 68 (1996) 1799.
6. A. R. Neureuther and C. G. Willson, J. Vac. Soc. & Technol., B4 (1988) 167.
7. T. Yamaguchi, H. Namathu, M, Nagase, K. Yamaguchi and K. Kurihara, Appl. Phys. Lett. 71 (1997) 2388.
8. J. Nakamura, K. Deguchi and H. Ban, J. Photopolym. Sci. & Technol.Vol. 11, No4 (1998) 571.
9. E. Shiobara, D. Kawamura, K. Matsunaga, T. Koike, S. Mimotogi, T. Azuma and Y. Onishi, Proc. SPIE, 3333 (1998) 313.