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Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 467-477

Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy

(2) Sethi, S a,b Bhattacharya, P K a

a University of Michigan (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

GaAs:Er; Molecular beam epitaxy (MBE); Photoluminescence

Indexed keywords

EID: 0001643296 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02666622 Document Type: Article

Times cited : (28)

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