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Journal of Applied Physics

Volumn 81, Issue 5, 1997, Pages 2391-2395

Effect of Er dopant on the properties of In0.53Ga0.47As layers grown by liquid phase epitaxy

(4) Dhar, S a Paul, S a Mazumdar, M a Banerjee, S b

a UNIVERSITY OF CALCUTTA (India)

b TATA INSTITUTE OF FUNDAMENTAL RESEARCH (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001766283 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.364243 Document Type: Article

Times cited : (6)

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