Ab-initio investigations on diffusion of halogen atoms in GaAs

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1821-1826

  Ohno, Kahisa ^a   Sasaki, Taizo ^a   Taguchi, Akihito ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

ab initio calculations; Chlorine; Diffusion; Fluorine; GaAs; Halogen; Passivation

Indexed keywords

CHARGE CARRIERS; CHLORINE; DIFFUSION IN SOLIDS; ELECTRON ENERGY LEVELS; FERMI LEVEL; FLUORINE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

FIRST PRINCIPLES TOTAL ENERGY CALCULATIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031339556     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1821     Document Type: Article

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