Effect of varying oxidation parameters on the generation of C-dangling bond centers in oxidized SiC

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 51-55

  Macfarlane, P J ^a   Zvanut, M E ^a  

^a UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HEAT TREATMENT; HYDROGEN BONDS; MOSFET DEVICES; OXIDATION; PARAMAGNETIC RESONANCE; TEMPERATURE;

CARBON DANGLING BONDS; DRY HEAT TREATMENT; WIDE BAND GAP SEMICONDUCTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033350420     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-51     Document Type: Conference Paper

References (13)

1. P.J. Macfarlane and M.E. Zvanut, Appl. Phys. Lett. 71, 2148 (1997).
2. P.J. Macfarlane and M.E. Zvanut, in Hydrogen in Semiconductors and Metals, edited by N.H. Nickel, W.B. Jackson, R.C. Bowman, and R. Leisure (Mater. Res. Soc. 513, Pittsburgh, PA 1998), pp. 433-438.
3. X. Zhou, G. Watkins, K.M. McNamara Rutledge, R.P. Messmer, and S. Chawla, Phys. Rev. B 54, 7881 (1996).
4. G. Gerardi, E. Poindexter, and C. Young, Appl. Spectrosc. 50, 1427 (1996).
5. V.V. Afanas'ev and A. Stesmans, Appl. Phys. Lett. 69, 2252 (1996).
6. P.J. Macfarlane and M.E. Zvanut, J. of Electron. Mater. 28, 144 (1999).
7. K.L. Brower, Physical Review B42, 3444 (1990).
8. J. Stathis, J. Appl. Phys. 77, 6205 (1995).
9. E. Poindexter, J. Non-Crystalline Solids 187, 257 (1995).
10. P.M. Lenahan and P.V. Dressendorfer, J. Appl. Phys. 55, 3495 (1984).
11. L.A. Lipkin and J.W. Palmour, J. Electron. Mater. 25, 909 (1996).
12. L. Muehloff, W.J. Choyke, M.J. Bozack, and J.T. Yates, J. Appl. Phys. 60,2842 (1986).
13. J.N. Shenoy, G.L. Chindalore, M.R. Melloch, J.A. Cooper, J.W. Palmour, and K.G. Irvine, J. Electron. Mater. 24, 303 (1995).