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Volumn 100, Issue 8, 1996, Pages 555-559

The influence of electron-hole-scattering on the gain spectra of highly excited semiconductors

Author keywords

A. semiconductors; B. carrier carrier interaction; B. optical properties

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CALCULATIONS; CHARGE CARRIERS; DIFFERENTIAL EQUATIONS; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; LIGHT POLARIZATION; OPTICAL PROPERTIES; QUANTUM THEORY; SPECTROSCOPY;

EID: 0030291180     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00494-2     Document Type: Article
Times cited : (51)

References (10)
  • 6
    • 85136547275 scopus 로고    scopus 로고
    • note
    • e Å.
  • 10
    • 30244469928 scopus 로고    scopus 로고
    • note
    • Note, that polarisation scattering [3] which turns out to be important for the situation of nonlinear excitation such as four-wave-mixing (FWM) close to the band edge can be neglected in our case, because we treat the situation of linear optics where products of polarisations, such as the polarisation scattering are higher-order terms. In this paper we are interested only in the principle effects of the interplay of non-diagonal- and diagonal-scattering, therefore exchange contributions of the Coulomb potential to the lineshape are neglected for numerical convinience.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.