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Volumn 100, Issue 8, 1996, Pages 555-559
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The influence of electron-hole-scattering on the gain spectra of highly excited semiconductors
a
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Author keywords
A. semiconductors; B. carrier carrier interaction; B. optical properties
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Indexed keywords
APPROXIMATION THEORY;
BAND STRUCTURE;
CALCULATIONS;
CHARGE CARRIERS;
DIFFERENTIAL EQUATIONS;
ELECTRON ENERGY LEVELS;
ELECTRON SCATTERING;
LIGHT POLARIZATION;
OPTICAL PROPERTIES;
QUANTUM THEORY;
SPECTROSCOPY;
CARRIER-CARRIER INTERACTION;
ELECTRON HOLE SCATTERING;
GAIN SPECTRA;
LINESHAPE;
OPTICAL DEPHASING;
SEMICONDUCTOR MATERIALS;
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EID: 0030291180
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1098(96)00494-2 Document Type: Article |
Times cited : (51)
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References (10)
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