Growth and characterization of 10-nm-thick c-axis oriented epitaxial PbZr0.25Ti0.75O3 thin films on (100)Si substrate

Applied Physics Letters

Volumn 73, Issue 24, 1998, Pages 3524-3526

  Maruyama, T ^a   Saitoh, M ^a   Sakai, I ^a   Hidaka, T ^a   Yano, Y ^b   Noguchi, T ^b  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b TDK CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000062256     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122824     Document Type: Article

References (10)

1. J. F. Scott and C. A. Paz de Araujo, Science 246, 1400 (1989).
2. T. Hidaka, T. Maruyama, M. Saitoh, N. Mikoshiba, M. Shimizu, T. Shiosaki, L. A. Wills, R. Hiskes, S. A. Dicarolis, and J. Amano, Appl. Phys. Lett. 68, 2358 (1996).
3. T. Hidaka, T. Maruyama, I. Sakai, M. Saitoh, L. A. Wills, R. Hiskes, S. A. Dicarolis, J. Amano, and C. M. Foster, Integr. Ferroelectr. 17, 319 (1997).
4. T. Kawakubo, K. Abe, S. Komatsu, K. Sano, N. Yanase, and H. Mochizuki, IEEE Electron Device Lett. 18, 529 (1997).
5. K. Ishikawa, T. Nomura, N. Okada, and K. Takada, Jpn. J. Appl. Phys., Part 1 35, 5196 (1996).
6. Y. Yano, K. Iijima, Y. Daitoh, T. Terashima, Y. Bando, Y. Watanabe, H. Kasatani, and H. Terauchi, J. Appl. Phys. 76, 7833 (1994).
7. K. Kamigaki, H. Terauchi, T. Terashima, Y. Bando, K. Iijima, K. Yamamoto, K. Hirata, K. Hayashi, I. Nakagawa, and Y. Tomii, J. Appl. Phys. 69, 3653 (1991).
8. P. Güthner and K. Dransfeld, Appl. Phys. Lett. 61, 1137 (1992).
9. A. Gruverman, H. Tokumoto, A. S. Prakash, S. Aggarwal, B. Yang, M. Wuttig, R. Ramesh, O. Auciello, and T. Venkatesan, Appl. Phys. Lett. 71, 3492 (1997).
10. J. S. Speck and W. Pompe, J. Appl. Phys. 76, 466 (1994).