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Surface Science

Volumn 374, Issue 1-3, 1997, Pages 283-290

Silicon epitaxy on hydrogen-terminated Si(001) surfaces using thermal and energetic beams

(2) Ramana Murty, M V a,b Atwater, Harry A b

a Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering (United States)

b CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

Epitaxy; Hydrogen; Molecular beam epitaxy; Molecular dynamics; Silicon

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; HYDROGEN; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; SPUTTER DEPOSITION; SURFACES;

HYDROGEN TERMINATED SILICON SURFACES; SILICON EPITAXY; SUBPLANTATION;

EPITAXIAL GROWTH;

EID: 0031097446 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/s0039-6028(96)01198-3 Document Type: Article

Times cited : (15)

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