Low temperature epitaxy of Si on dihydride-terminated Si(001): Energetic versus thermal growth

Materials Research Society Symposium - Proceedings

Volumn 441, Issue , 1997, Pages 579-584

  Taylor, M E ^a   Atwater, Harry A ^a   Murty, M V Ramana ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; PRESSURE EFFECTS; PULSED LASER APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; THERMAL EFFECTS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; PULSED LASER DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0030660023     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)