Use of electrical stress and isochronal annealing on power mosfets in order to characterize the effects of60CO Irradiation

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1647-1652

  Picard, C ^a,b   Brisset, C ^a   Hoffmann, A ^b   Charles, J P ^b   Joffre, F ^a   Adams, L ^c   Holmes Siedle, A ^c  

^a CEA SACLAY   (France)

^b Ctr Lorrain d'Optique d'E   (France)

^c BRUNEL UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000018570     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00182-7     Document Type: Article

References (7)

1. A. Holmes-Siedle and L. Adams, "Handbook of Radiation Effects", Oxford University Press, 1994.
2. P.S. Winokur, G.K. Lum, M.R. Shaneyfelt, F.W. Sexton, G.L. Hash and L. Scott, "Use of COTS Microelectronics in Radiation Environments", IEEE Transactions on Nuclear Science, vol.46, no.6, pp.1494-1503.
3. Total Dose Steady-State Irradiation Test Method, ESA/SCC Basic Specification N°22900, Issue 3,NovembreMéthode de l'ESA
4. MIL-STD 883 D Test Method 1019.4, issued January 1992 by the Defense Electronics Support Center, Dayton, OH.
5. T.P. Chen, L. Stella, S. Fung, C.D. Beling and K.F. Lo, "Post-Stress Interface Trap Generation Induced by Oxide-Field Stress with FN Injection", IEEE Transactions on Electron Devices, vol.45, no.9, pp.1972-1977, 1998.
6. S. Dimitrijev and N. Stojadinovic, "Analysis of CMOS Instabilities", Solid-State Electronics, Vol.30, no.10, pp.991-1003, 1987.
7. J.L. Autran, O. Flament, C. Chabrerie, O. Musseau and J.L. Leray, "Annealing of Stress-Induced Interface and Border Traps in MOS Devices : a Charge-Pumping Study", ESSDERC 96, 26th European Conference, Bologna (Italy), pp.851-854, 1996.