Modelling of bandgap and band offset properties in III-N related heterostructures

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 685-692

  Akinci, Özden ^a   Gürel, H Hakan ^a   Ünlü, Hilmi ^a  

^a ISTANBUL TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Heterostructures; Modeling; Nitrides; Tight binding theory

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; HAMILTONIANS; MATHEMATICAL MODELS; MATRIX ALGEBRA; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

ATOMIC ORBITALS; ELECTRONIC BAND STRUCTURE; STRAIN EFFECTS; TIGHT BINDING THEORY;

HETEROJUNCTIONS;

EID: 9944247050     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.049     Document Type: Article

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