Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 446-450

  Wallart, X ^a   Mollot, F ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL RELAXATION; COMPOSITION EFFECTS; DECOMPOSITION; MOLECULAR BEAM EPITAXY; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TENSILE STRESS; THERMAL EFFECTS;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); STRAINED GROWTH;

SEMICONDUCTING FILMS;

EID: 0034299311     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00466-9     Document Type: Article

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