Effects of postdeposition annealing on the dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films derived from pulsed laser deposition

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5830-5835

  Yao, Yingbang ^a   Lu, S G ^a   Chen, Haydn ^a   Wong, K H ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANTIFERROELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DIELECTRIC RELAXATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; LANTHANUM; MICROSTRUCTURE; PULSED LASER DEPOSITION; SILICON; SUBSTRATES; THIN FILMS;

FILM PROPERTIES; FREQUENCY DEPENDENCE; LEAD ZIRCONATE STANNATE TITANATE; POSTDEPOSITION ANNEALING;

LEAD COMPOUNDS;

EID: 9944219645     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1804226     Document Type: Article

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