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Volumn 27, Issue 7, 2004, Pages 955-964

Analysis and validation of thermal and packaging effects of a piezoresistive pressure sensor

Author keywords

Finite element method (FEM); Package; Parametric analysis; Piezoresistive pressure sensor

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; FINITE ELEMENT METHOD; OPTIMIZATION; PARAMETRIC DEVICES; SENSITIVITY ANALYSIS; SENSORS; THERMAL EFFECTS;

EID: 9744242192     PISSN: 02533839     EISSN: 21587299     Source Type: Journal    
DOI: 10.1080/02533839.2004.9670950     Document Type: Article
Times cited : (6)

References (11)
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    • French, P.J.1    Evans, A.G.R.2
  • 4
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    • A Graphical Representation of the Piezoresistance Coefficient in Silicon
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    • Kanda, Y.1
  • 5
    • 0031177512 scopus 로고    scopus 로고
    • Optimum Design Considerations for Silicon Piezoresistive Pressure Sensor
    • Kanda, Y., 1997. “Optimum Design Considerations for Silicon Piezoresistive Pressure Sensor,”. Sensor and Actuators, A62 (1–3):539–542.
    • (1997) Sensor and Actuators , vol.A62 , Issue.1-3 , pp. 539-542
    • Kanda, Y.1
  • 6
    • 0347032865 scopus 로고    scopus 로고
    • Measurement of the Temperature Dependency of the Piezoresistance Coefficients in P-Type Silicon
    • Lund, E., and Finstad, T., 1999. “Measurement of the Temperature Dependency of the Piezoresistance Coefficients in P-Type Silicon,”. Advances in Electronic Packaging-ASME, EEP, 26–1:215–218.
    • (1999) Advances in Electronic Packaging-ASME, EEP , vol.26-1 , pp. 215-218
    • Lund, E.1    Finstad, T.2
  • 7
    • 0342626600 scopus 로고    scopus 로고
    • The Empirical Verification of the FEM Model of Semiconductor Pressure Sensor
    • Pancewicz, T., Jachowicz, R., Gniazdowski, Z., Azgin, Z., and Kowalski, P., 1999. “The Empirical Verification of the FEM Model of Semiconductor Pressure Sensor,”. Sensor and Actuators, A76 (1–3):260–265.
    • (1999) Sensor and Actuators , vol.A76 , Issue.1-3 , pp. 260-265
    • Pancewicz, T.1    Jachowicz, R.2    Gniazdowski, Z.3    Azgin, Z.4    Kowalski, P.5
  • 8
    • 34249846476 scopus 로고
    • Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance Effects
    • Pfann, W. G., and Thurston, R. N., 1961. “Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance Effects,”. Journal of Applied Physics, 32:2008–2018.
    • (1961) Journal of Applied Physics , vol.32 , pp. 2008-2018
    • Pfann, W.G.1    Thurston, R.N.2
  • 9
    • 0031141301 scopus 로고    scopus 로고
    • Simulation of Thermally Induced Package Effects with Regard to Piezoresistive Pressure Sensors
    • Schilling, F., Langheinrich, W., Weiblen, K., and Arand, D., 1997. “Simulation of Thermally Induced Package Effects with Regard to Piezoresistive Pressure Sensors,”. Sensor and Actuators, A60 (1–3):37–39.
    • (1997) Sensor and Actuators , vol.A60 , Issue.1-3 , pp. 37-39
    • Schilling, F.1    Langheinrich, W.2    Weiblen, K.3    Arand, D.4
  • 10
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    • Piezoresistance Effect in Germanium and Silicon
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  • 11
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    • New York, USA: John Wiley & Sons
    • Sze, S. M., 1994. Semiconductor Sensors, 173New York, USA:John Wiley & Sons.
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    • Sze, S.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.