Burstein-Moss shift in impurity-compensated bulk Ga 1-xIn xSb substrates

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 5349-5352

  Pino, R ^a   Ko, Y ^a   Dutta, P S ^a   Guha, Shekhar ^b   Gonzalez, Leonel P ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; HOMOGENIZATION; MATERIAL SYSTEMS; TEMPERATURE GRADIENTS;

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LAPPING; SEMICONDUCTOR MATERIALS; SUBSTRATES;

GALLIUM COMPOUNDS;

EID: 9744229201     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1796538     Document Type: Article

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