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Volumn 75, Issue 10 I, 2004, Pages 3169-3176

Cryogenic amplifier for ∼1 MHz with a high input impedance using a commercial pseudomorphic high electron mobility transistor

(2) Robinson, A M a Talyanskii, V I a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; ELECTRON MOBILITY; RESONANT CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE; STABILITY; TRANSISTORS;

CYROGENIC AMPLIFIERS; ELECTRON MOBILITY TRANSISTORS; POWER DISSIPATION; ROOM TEMPERATURE;

AMPLIFIERS (ELECTRONIC);

EID: 9744223632 PISSN: 00346748 EISSN: None Source Type: Journal
DOI: 10.1063/1.1790586 Document Type: Article

Times cited : (33)

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