Fabrication and properties of PZT micro cantilevers using isotropic silicon dry etching process by XeF2 gas for release process

Sensors and Actuators, A: Physical

Volumn 117, Issue 1, 2005, Pages 1-7

  Park, Joon Shik ^a,b   Park, Hyo Derk ^a   Kang, Sung Goon ^b  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

Dry etching; Isotropic; Micro cantilever; PZT; Silicon; XeF2 gas

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; MICROMACHINING; PIEZOELECTRIC TRANSDUCERS; SILICON; XENON;

ANISOTROPIC ETCHING; MICRO CANTILEVER; WET CHEMICAL SOLUTIONS;

DRY ETCHING;

EID: 9644303266     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2003.10.069     Document Type: Article

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