Preparation of SrRuO3 films for advanced CMOS metal gates

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 265-269

  Frohlich K ^a   Husekova K ^a   Machajdik D ^a   Luptak R ^a   Tapajna M ^a   Hooker, J C ^b   Roozeboom, F ^b   Kobzev, A P ^c   Wiemer, C ^d   Ferrari, S ^d   Fanciulli, M ^d   Rossel, C ^e   Cabrai Jr , C ^f  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^d LABORATORIO MDM   (Italy)

^e IBM RESEARCH ZURICH   (Switzerland)

^f IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

CMOS technology; Metal gates; Metal organics chemical vapour deposition

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; STRONTIUM COMPOUNDS; SUBSTRATES;

CMOS TECHNOLOGY; METAL GATES; SILICON SUBSTRATES;

CMOS INTEGRATED CIRCUITS;

EID: 9544255715     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.012     Document Type: Conference Paper

References (5)

1. Wilk GD, Wallace RM, Anthony JM. J. Appl. Phys. 2001;89:5243.
2. Halley D, Rossel C, Widmer D, Wolf H, Gariglio S. Mat. Sci. Eng. B 2004;109:113.
3. Choi ES, Park SS, Yoon SG. Integrated Ferroelectrics 2002;47:31.
4. Fröhlich K, Husekova K, Oszi Z, Hooker JC, Fianculli M, Wiemers C, Dimoulas A, Vellianitis G, Roozeboom F. Ann Phys 2003;13:31.
5. Fröhlich K, Husekova K, Machajdik D, Hooker JC, Perez N, Fanciulli M, Ferrari S, Wiemer C, Dimoulas A, Vellianitis G, Roozeboom F. Mat. Sci. Eng. B 2004; 109:117.