Ion implantation impurity profiles in HfO2

IEEE Transactions on Electron Devices

Volumn 49, Issue 10, 2002, Pages 1836-1838

  Suzuki, Kunihiro ^a   Morisaki, Yusuke ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

As; B; HfO2; Ion implantation; P

Indexed keywords

ARSENIC; BORON; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; FUNCTIONS; HAFNIUM COMPOUNDS; IMPURITIES; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SILICA; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION; PEARSON IV FUNCTION;

ION IMPLANTATION;

EID: 0036772974     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.803649     Document Type: Article

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