Effect of pressure on surface passivation of silicon solar cell by forming gas annealing

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 427-431

  Dhungel, Suresh Kumar ^a   Yoo, Jinsu ^a   Kim, Kyunghae ^a   Karunagaran, Bojan ^a   Sunwoo, Hwang ^a   Mangalaraj, Devanesan ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Annealing; Forming gas; Passivation

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTALLINE MATERIALS; DIFFUSION; FORMING; HYDROGEN; NITROGEN; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SILICON NITRIDE; SINGLE CRYSTALS;

CONVERSION EFFICIENCIES; FORMING GAS ANNEALING (FGA); FORMING GASES (FG); RECOMBINATION CENTERS;

SOLAR CELLS;

EID: 9544243727     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.101     Document Type: Conference Paper

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