In situ SIC feeding by chemical vapor deposition for bulk growth

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 139-142

  Charpentier, L ^a   Baillet, F ^b   Chaussende, D ^a   Auvray, L ^c   Pons, M ^b   Pernot, E ^a   Madar, R ^a  

^a Grenoble INP Phelma   (France)

^b UNIV GRENOBLE ALPES   (France)

^c SAVOIE TECHNOLAC   (France)

Author keywords

Bulk; Chemical Vapour Deposition; Physical Vapour Transport; Silicon Carbide; Simulations

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CRYSTAL GROWTH; ENERGY DISPERSIVE SPECTROSCOPY; FOAMS; GRAPHITE; POROUS MATERIALS; SUBLIMATION; THERMODYNAMICS; X RAY DIFFRACTION ANALYSIS;

DEPOSITION RATES; GRAPHITE FOAMS; PHYSICAL VAPOR TRANSPORT; THERMODYNAMIC MODELS;

SILICON CARBIDE;

EID: 8744275385     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.139     Document Type: Conference Paper

References (7)

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