Heat Transfer Modeling of a New Crystal Growth Process

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 103-106

  Baillet, F ^c   Chaussende, D ^a   Charpentier, L ^b   Pernot, E ^b   Pons, M ^c   Madar, R ^b  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b UNIV GRENOBLE ALPES   (France)

^c SAVOIE TECHNOLAC   (France)

Author keywords

Bulk Growth; Heat Transfer; Modeling; Silicon Carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CONDENSATION; HEAT TRANSFER; SILICON CARBIDE; SUBLIMATION; TEMPERATURE DISTRIBUTION;

BULK GROWTH;

CRYSTAL GROWTH;

EID: 0242497058     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.103     Document Type: Conference Paper

References (5)

1. D.Hobgood, M.Brady, W.Brixius, G.Fechko, R.Glass, D.Henshall, J.Jenny, R.Leonard, D.Malta, St.G.Muller, V.Tsvetkov, C.H.Carter Jr., Mater.Sci.Forum 338-342, 3 (2000).
2. D.Epelbaum, D.Hofmann, M.Muller, A.Winnacker, Mater.Sci.Forum 338-342, (2000).
3. A.Ellison, J. Zhang, W. Magnusson, A. Henry, Q. Wahab, J.P. Bergman, C. Hemmingson, N.T. Son, E. Janzen, Mat. Sci. Forum: Vol. 338-342, 1312 (2000).
4. L. Charpentier D. Chaussende, F. Baillet et al., this conference
5. D. Chaussende L. Charpentier, F. Baillet et al., this conference