Indium arsenide light-emitting diodes with a cavity formed by an anode contact and semiconductor-air interface

Semiconductors

Volumn 38, Issue 10, 2004, Pages 1230-1234

  Zotova, N V ^a   Il'Inskaya, N D ^a   Karandashev, S A ^a   Matveev, B A ^a   Remennyi, M A ^a   Stus, N M ^a   Shustov, V V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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[No Author keywords available]

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EID: 8744264015     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1808835     Document Type: Article

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