TEM observations of 4H-SiC deformed at room temperature and 150°C

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 343-346

  Demenet, J L ^a   Milhet, X ^b   Rabier, J ^a   Cordier, P ^c,d  

^a UNIVERSITÉ DE POITIERS   (France)

^b ENSMA   (France)

^c UNIVERSITÄT BAYREUTH   (Germany)

^d UNIV LILLE   (France)

Author keywords

4H silicon carbide; High pressure; Partial dislocations; Perfect dislocations; Plasticity

Indexed keywords

ANISOTROPY; CRYSTAL GROWTH; HYDROSTATIC PRESSURE; PLASTICITY; SINGLE CRYSTALS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

4H-SILICON CARBIDE; HIGH PRESSURE; PARTIAL DISLOCATIONS; PERFECT DISLOCATIONS;

SILICON CARBIDE;

EID: 8644260080     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.343     Document Type: Conference Paper

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