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Volumn 99-100, Issue , 2004, Pages 49-52
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Growth of InAs quantum dots on a low lattice-mismatched AlGaSb layer prepared on GaAs (001) substrates
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Author keywords
AlGaSb; III V semiconductors; InAs; Low lattice mismatch; Quantum dots
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Indexed keywords
CRYSTAL GROWTH;
CRYSTAL ORIENTATION;
FIBER OPTICS;
OPTICAL COMMUNICATION;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTOR QUANTUM DOTS;
X RAY DIFFRACTION ANALYSIS;
ATOMIC FORCE MICROSCOPY;
GALLIUM ARSENIDE;
III-V SEMICONDUCTORS;
INDIUM ARSENIDE;
LATTICE MISMATCH;
NANOCRYSTALS;
NARROW BAND GAP SEMICONDUCTORS;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR ALLOYS;
SUBSTRATES;
BUFFER LAYERS;
COMPRESSIVE STRAIN;
STRUCTURAL SELECTIVITY;
ALGASB;
GROWTH CONDITIONS;
GROWTH TECHNIQUES;
INAS;
INAS QUANTUM DOTS;
LATTICE-MISMATCHED;
OPTICAL COMMUNICATION WAVELENGTH;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 8644258475
PISSN: 10120394
EISSN: None
Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.99-100.49 Document Type: Conference Paper |
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Times cited : (1)
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References (6)
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