Influence of copper purity on microstructure and electromigration

Proceedings of the IEEE 2004 International Interconnect Technology Conference

Volumn , Issue , 2004, Pages 45-47

  Alers, G B ^a   Lu, X ^b   Sukamto, J H ^a   Kailasam, S K ^a   Reid, J ^a   Harm, G ^a  

^a Novellus Systems   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLANKET WAFERS; COPPER PURITY; INTERFACIAL DIFFUSION; MICROVOID DENSITY;

ANNEALING; COPPER; DIELECTRIC MATERIALS; ELECTROMIGRATION; FAILURE ANALYSIS; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); MICROSTRUCTURE; PASSIVATION; RELIABILITY; SILICA;

INTERCONNECTION NETWORKS;

EID: 8644258474     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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