An engineering approach to predict the polishing rate in CMP with rotational equipment

Journal of the Electrochemical Society

Volumn 151, Issue 10, 2004, Pages

  Chen, Ping Hsun ^a   Shih, Han C ^a   Huang, Bing Wei ^a   Hsu, Jyh Wei ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; MATHEMATICAL TRANSFORMATIONS; OXIDES; PRESSURE EFFECTS; THERMOANALYSIS;

CHEMICAL MECHANICAL POLISHING (CMP); PARTICLE AGGREGATION; SHALLOW TRENCH ISOLATION; SURFACE DEFORMATION;

POLISHING;

EID: 8644232631     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1784171     Document Type: Article

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