A Self-Consistent CW Model of Unstable Cavity Semiconductor Lasers including Symmetrical and Antisymmetrical Solutions

Optics InfoBase Conference Papers

Volumn , Issue , 2007, Pages

  Esquivias, I ^a   Odriozola, H ^a   Tijero, J M G ^a   Minguez A M ^a   Borruel, L ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

A-STABLE; OPTICAL FIELD; SIMULATION MODEL; STABLE SOLUTIONS; UNSTABLE CAVITY;

SEMICONDUCTOR LASERS;

EID: 85136153443     PISSN: None     EISSN: 21622701     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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4. S. Sujecki et al., “Nonlinear Properties of Tapered Laser Cavities”, IEEE J. Select. Topics Quantum Electron., 9, 823-834, (2003).
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6. M. Krakowski et al., “1 W, High Brightness, Index Guided Tapered Lasers at 980 nm using Al-free Active Region Material”, Electron. Lett. , 39, 1122-1123 (2003).
7. S.C. Auzanneau et al., “High Power and High Brightness Laser Diode Structures at 980 nm using an Al-free Active Region”, Proc. SPIE, vol. 4995, 184-195, (2003)
8. N. Michel et al., “High-power, High-brightness Tapered Lasers with an Al-free Active Region at 915 nm”, Proc. SPIE, vol. 6133, 86-95, (2006)