Electrical and optical properties of semi-insulating InP obtained by wafer and ingot annealing

Materials Science and Engineering B

Volumn 45, Issue 1-3, 1997, Pages 147-151

  Zappettini, A ^a   Fornari, R ^a   Capelletti, R ^b  

^a CNR   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

Author keywords

Fe doped InP; Ingot annealing; Optical properties

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CARRIER CONCENTRATION; CRYSTAL GROWTH FROM MELT; DIFFUSION IN SOLIDS; HALL EFFECT; INGOTS; INSULATING MATERIALS; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING;

SEMICONDUCTOR WAFERS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031100262     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)02014-4     Document Type: Article

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