Electrical activity of residual boron in silicon carbide

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 549-552

  Storasta, L ^a   Bergman, J P ^a   Hallin, C ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

Author keywords

Boron; Carrier lifetime; DLTS; MCTS; Residual impurities

Indexed keywords

CARRIER LIFETIME; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRON TRAPS; SILICON CARBIDE;

MINORITY CARRIER TRANSIENT SPECTROSCOPY (MCTS); RESIDUAL BORON; RESIDUAL IMPURITIES;

BORON;

EID: 85086630178     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.549     Document Type: Article

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