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Volumn 64, Issue 22, 2001, Pages

Model for the defect-related electrical conductivity in ion-damaged diamond

Author keywords

[No Author keywords available]

Indexed keywords


EID: 85038271366     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.224110     Document Type: Article
Times cited : (2)

References (29)
  • 6
    • 85038345738 scopus 로고    scopus 로고
    • B. I. Shklovskii and A. L. Efros, Springer Series in Solid-State Sciences, 45 (Springer-Verlag, Berlin, 1984)
    • B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors, Springer Series in Solid-State Sciences, Vol. 45 (Springer-Verlag, Berlin, 1984).
  • 12
    • 85038307603 scopus 로고    scopus 로고
    • private communication)
    • E. Baskin and M. Entin (private communication).
    • Baskin, E.1    Entin, M.2
  • 13
    • 0001599099 scopus 로고
    • S. Pantelides, Gordon and Breach, New York, in, edited by, p
    • G. Watkins, in Deep Centers in Semiconductors, edited by S. Pantelides (Gordon and Breach, New York, 1986), p. 147.
    • (1986) Deep Centers in Semiconductors , pp. 147
    • Watkins, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.