On gate capacitance of nanotube networks

IEEE Electron Device Letters

Volumn 32, Issue 5, 2011, Pages 641-643

  Liu, Zhiying ^a,b,c   Li, Jiantong ^c   Qiu, Zhi Jun ^a   Zhang, Zhi Bin ^b,c   Zheng, Li Rong ^a,c   Zhang, Shi Li ^a,b  

^a FUDAN UNIVERSITY   (China)

^b UPPSALA UNIVERSITY   (Sweden)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Frequency dependence; gate capacitance; nanotube networks; percolation; transmission line model

Indexed keywords

CAPACITANCE; CARBON; ELECTRIC LINES; ELECTROMAGNETIC WAVE EMISSION; NANOTUBES; PERCOLATION (SOLID STATE); SOLVENTS; THIN FILM TRANSISTORS; TRANSMISSION LINE THEORY; YARN;

FREQUENCY DEPENDENCE; FREQUENCY DISPERSION; GATE CAPACITANCE; NANOTUBE NETWORKS; RC TRANSMISSION LINES; SINGLE-WALLED CARBON NANOTUBE (SWCNTS); THIN-FILM TRANSISTOR (TFTS); TRANSMISSION LINE MODELING;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 85027953268     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2118733     Document Type: Article

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