Charge-injection-induced time decay in carbon nanotube network-based FETs

IEEE Electron Device Letters

Volumn 31, Issue 10, 2010, Pages 1098-1100

  Qu, Minni ^a   Qiu, Zhi Jun ^a   Zhang, Zhi Bin ^b   Li, Hui ^a   Li, Jiantong ^b   Zhang, Shi Li ^a,c  

^a FUDAN UNIVERSITY   (China)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UPPSALA UNIVERSITY   (Sweden)

Author keywords

Carbon nanotube network; charge injection; field effect transistor; hysteresis; relaxation

Indexed keywords

CARBON NANOTUBE NETWORK; CARRIER RECOMBINATION; CONDUCTION CHANNEL; EXPONENTIAL DECAYS; LITERATURE DATA; ORDER OF MAGNITUDE; PULSE METHODS; RELAXATION; SOURCE-DRAIN CURRENT; TIME CONSTANTS; TIME DECAY; TRAPPED CARRIERS;

CARBON NANOTUBES; DECAY (ORGANIC); HYSTERESIS; SINGLE-WALLED CARBON NANOTUBES (SWCN);

FIELD EFFECT TRANSISTORS;

EID: 77957572527     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2061833     Document Type: Article

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