Cobalt advanced barrier metallization: A resistivity composition analysis

Microelectronic Engineering

Volumn 137, Issue 1, 2015, Pages 11-15

  Wislicenus, M ^a   Liske, R ^a   Gerlich, L ^a   Vasilev, B ^b   Preusse, A ^b  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b GLOBALFOUNDRIES   (Germany)

Author keywords

Back end of line metallization; CCTBA (dicobalt hexacarbonyl tertbutylacetylene); MOCVD Co; Resistivity modeling; Thin films

Indexed keywords

FILM THICKNESS; GRAIN BOUNDARIES; METALLIZING; SURFACE SCATTERING; THIN FILMS;

BACK END OF LINES; BARRIER METALLIZATION; COMPOSITION ANALYSIS; DICOBALT HEXACARBONYL; FOUR-POINT PROBE MEASUREMENTS; GRAIN BOUNDARY SCATTERING; MEASUREMENT METHODS; RESISTIVITY MODELING;

COBALT;

EID: 85027923934     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2014.09.017     Document Type: Article

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