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Volumn , Issue , 2010, Pages

Trap Level Spectroscopy in Amorphous Semiconductors

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EID: 85013910612     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/C2009-0-64149-0     Document Type: Book
Times cited : (7)

References (173)
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    • (2002) Handbook of Imaging Materials , pp. 329
    • Kasap, S.O.1
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    • see also B. Polischuk, S.O. Kasap, V. Aiyah, A. Baillie, M.A. Abkowitz, Can. J. Phys. 69 (1991) 361
    • B. Polischuk, S.O. Kasap, V. Aiyah, A. Baillie, Int. J. Electron. 76 (1994) 1029. see also B. Polischuk, S.O. Kasap, V. Aiyah, A. Baillie, M.A. Abkowitz, Can. J. Phys. 69 (1991) 361.
    • (1994) Int. J. Electron , vol.76 , pp. 1029
    • Polischuk, B.1    Kasap, S.O.2    Aiyah, V.3    Baillie, A.4
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    • (1991) Handbook of Imaging Materials , pp. 329
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    • in: Proc. 4th International Symposium. Uses of Selenium and Tellurium, Inc, New York,
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    • Springett, B.E.1
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    • (2002) Handbook of Imaging Materials
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  • 134
  • 137
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.