Field dependence of the hole transit-time dispersion in As-Cl stabilized amorphous selenium X-ray photoconductors

Journal of Imaging Science and Technology

Volumn 45, Issue 1, 2001, Pages 30-36

  Kasap, S O ^a   Haugen, C ^a   Polischuk, B ^a   Emelianova, E V ^a   Arkhipov, V I ^a  

^a UNIVERSITY OF SASKATCHEWAN   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC FIELDS; ELECTROMAGNETIC DISPERSION; IMAGING TECHNIQUES; PHOTOCURRENTS; SEMICONDUCTING FILMS; SEMICONDUCTING SELENIUM; TRANSIT TIME DEVICES; X RAY ANALYSIS;

HOLE TRANSIT-TIME DISPERSION; TIME OF FLIGHT MEASUREMENTS; X RAY PHOTOCONDUCTORS;

PHOTOCONDUCTING MATERIALS;

EID: 0035084972     PISSN: 10623701     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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