Trap level spectroscopy in amorphous selenium-based semiconductors

Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 11, 2009, Pages 1059-1067

  Mikla, V I ^a   Mikla, V V ^b  

^a UZHGOROD NATIONAL UNIVERSITY   (Ukraine)

^b Yazaki Ukraine Ltd   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SELENIUM; DEFECT STATE; MOBILITY GAP; SPECTROSCOPIC TECHNIQUE; THERMALLY STIMULATED DEPOLARIZATION CURRENTS; TRAP LEVELS;

SELENIUM;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 70349423418     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-009-9951-y     Document Type: Review

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