DC to 50 GHz wide bandwidth InGaAs photodiodes and photoreceivers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 10295, Issue , 1999, Pages 181-196

  Joshi, Abhay M ^a   Wang, Xinde ^a  

^a DISCOVERY SEMICONDUCTORS INC   (United States)

Author keywords

InGaAs photodiodes; InP p HEMT; OEIC; Photoreceivers; Wide bandwidth

Indexed keywords

BANDWIDTH; FIBERS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GROUP DELAY; INDIUM COMPOUNDS; INTEGRATED OPTOELECTRONICS; OPTICAL FIBERS; OPTOELECTRONIC DEVICES; PHOTODIODES; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM PHOSPHIDE;

BACK REFLECTION; INGAAS PHOTODIODES; PHOTORECEIVERS; REVERSE BIAS; RIPPLE FACTOR; SALIENT FEATURES; VOLTAGE CONVERSION GAIN; WIDE BANDWIDTH;

INDIUM ALLOYS;

EID: 85011955602     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.361073     Document Type: Conference Paper

References (10)

1. H.C. Huang, P. Laux, J.F. Bass, S.W. Chen, T.T. Lee, S. Tadayon, J.L. Singer, J. Kearney, and O.A. Aina, "A W-band Multifunction MMIC, " IEEE MTT Conf., San Diego, June 1994.
2. M.G. McDermott, C.N. Sweeney, J. Borelli, G. Dawe, and L. Raffaelli, "Integration of High-Q Varactor Diodes and 0.25 um GaAs MESFETs for Multifunction Millimeter Wave Monolithic Circuit Applications, " IEEE Trans, on Elect. Dev., Vol. 38, No. 9, pp. 1183-1190, 1990.
3. W.J. Ho, E.A. Sovero, D.S. Deakin, R.D. Stein, G.J. Sullivan, and J.A. Higgins, "Monolithic Integration of HEMTs and Schottky Diodes for Millimeter Wave Circuits, " IEEE GaAs Integrated Circuits Symp. Dig., pp. 301, 1988.
4. G. Sasaki, K.I. Koike, N. Kuwata, and K. Ono, "Optoelectronics Integrated Receivers on InP Substrates by OMVPE, " J. of Lightwave Tech., Vol. 7, No. 10, pp. 1510, 1989.
5. H. Yano, M. Murata, G. Sasaki, and H. Hayashi, "A High Speed Eight Channel Optoelectronic Integrated Receiver Array Comprising GalnAs p-i-n PD's and AlInAs/GalnAs HEMTs, " J. of Lightwave Tech., Vol. 10, No. 7, pp. 933, 1992.
6. S.D. Walker, L.C. Blank, R.A. Garnham, and J.M. Boggis, "High Electron Mobility Transistor Lightwave Receiver for Broad-Band Optical Transmission System Applications, " J. of Lightwave Tech., Vol. 7, No. 3, pp. 454, 1989.
7. F. J. Effenberger, A. M. Joshi, "Ultrafast, Dual-Depletion Region, InGaAs/InP p-i-n Detector, " J. of Lightwave Tech., Vol. 14, pp. 1859-1864, (1996).
8. K.J. Williams, R.D. Esman, and M. Dagenais, "Effects of High Space-Charge Fields on the Response of Microwave Photodetectors, " IEEE Photon. Tech. Lett., Vol. 6, No. 5, pp. 639-641, 1994.
9. K.J. Williams, R.D. Esman, R.B. Wilson, and J.D. Kulick, "Differences in p-side and n-side Illuminated p-i-n Photodiode Nonlinearities, " IEEE Photon Tech. Lett., Vol. 10, No. 1, pp. 132-135, 1998.
10. K.J. Williams, Naval Research Lab., Private Communications, July 1999.