Why abrasive free Cu slurry is promising?

Materials Research Society Symposium - Proceedings

Volumn 671, Issue , 2001, Pages M1.3.1-M1.3.12

  Kamigata, Yasuo ^a   Kurata, Yasushi ^a   Masuda, Katsuyuki ^a   Amanokura, Jin ^a   Yoshida, Masato ^a   Hanazono, Masanobu ^a  

^a High Performance Materials Department   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85010723516     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-671-m1.3     Document Type: Article

References (6)

1. Full copper wiring in a sub-0.25 μ m CMOS ULSI technology
2. A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects
3. Optimizing the electromigration performance of copper interconnections
4. Complete-abrasive-free process for copper damascene interconnection
5. A 7 level metallization with Cu damascene process using abrasive free polishing