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Materials Research Society Symposium-Proceedings

Volumn 640, Issue , 2001, Pages H2.7.1-H2.7.6

Structural characterization of SiC epitaxial layers grown on porous SiC substrates

(10) Saddow, S E b Melnychuk, G b Mynbaeva, M d Nikitina, I d Vetter, W M e Jin, L e Dudley, M e Shamsuzzoha, M f Dmitriev, V g Wood, C E C c

a OFFICE OF NAVAL RESEARCH (United States)

b Emerging Materials Research Laboratory (United States)

c Ioffe Institute ^*

d IOFFE INSTITUTE (Russian Federation)

e STONY BROOK UNIVERSITY (United States)

f University of Alabama (United States)

g TDI Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85009851654 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (4)

References (9)

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- Shor, J.S.¹ Grimberg, I.² Weiss, B.³ Kurtz, A.D.⁴

2
- 36449006541
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- Harris, C.I.¹ Konstantinov, A.O.² Hallin, C.³ Janzen, E.⁴

3

4
- 0004164046
- (in press)
- (2000) Proc. of the MRS Spring 2000 Meeting
- Melnychuk, G.¹ Saddow, S.E.² Mynbaeva, M.³ Rendakova, S.⁴ Dmitriev, V.⁵

5
- 0032642137
- (1999) Mat. Science & Engr. B , vol.61-62 , pp. 158
- Saddow, S.E.¹ Mazzola, M.S.² Rendakova, S.V.³ Dmitriev, V.A.⁴

6
- 0004000265
- Comparison of various epitaxial growth processes on porous SiC substrates porous SiC
- MoP-56 European Conf. on SiC and Related Materials (ECSCRM'2000), Kloster Banz, Germany, September 3-7, 2000
- Mynbaeva, M.¹ Saddow, S.E.² Melnychuk, G.³ Syrkin, A.⁴ Bauman, D.⁵ Kuznetsov, N.⁶ Nikitina, I.⁷ Sitnikova, A.⁸ Scheglov, M.⁹ Soloviev, V.¹⁰ Dmitriev, V.¹¹

7
- 0031648293
- Study of hollow-core screw dislocations in 6H-SiC and 4H-SiC single crystals
- in Silicon Carbide, III-Nitrides, and Related Materials 1997, G. Pensl, H. Morkoc, B. Monemar, and E. Janzen (Eds.); Switzerland: Trans Tech Publications, Switzerland; M. Dudley
- (1998) Materials Science Forum , vol.264-268 , pp. 429-432
- Si, W.¹ Dudley, M.² Glass, R.³ Tsvetkov, V.⁴ Carter, C.H.⁵

8
- 0003995113
- SiC defect density reduction by epitaxy on porous surfaces
- Tu 2-2 European Conf. on SiC and Related Materials (ECSCRM'2000), Kloster Banz, Germany, September 3-7, 2000
- Saddow, S.E.¹ Mynbaeva, M.² Choyke, W.J.³ Devaty, R.P.⁴ Bai, S.⁵ Melnychuck, G.⁶ Koshka, Y.⁷ Dmitriev, V.⁸ Wood, C.E.C.⁹

9
- 85009912755
- Chemical vapor deposition of 4H-SiC epitaxial layers on porous SiC substrates
- To be published in Appl. Phys. Lett., 8 Jan
- (2001)
- Mynbaeva, M.¹ Saddow, S.E.² Melnychuk, G.³ Nikitina, I.⁴ Scheglov, M.⁵ Sitnikova, A.⁶ Kuznetsov, N.⁷ Zubrilov, A.⁸ Mynbaev, K.⁹ Seredova, N.¹⁰ Dmitriev, V.¹¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.