Characterization of Damage in SiO2 during Helium Ion Microscope Observation by Luminescence and TEM-EELS

Microscopy and Microanalysis

Volumn 18, Issue S2, 2012, Pages 814-815

  Ogawa, S ^a   Iijima, T ^a   Awata, S ^b   Sugie, R ^c   Kawasaki, N ^c   Otsuka, Y ^c  

^a Nat l Institute of Advanced Industrial Science Technology   (Germany)

^b HORIBA LTD   (Japan)

^c TORAY RESEARCH CENTER INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85008522428     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927612005922     Document Type: Article

References (4)

1. S. Ogawa, et al, Jpn. J. Appl. Phys., 49 04DB12 (2010),
2. S. Ogawa, et al, Proc. of International Interconnect Technology Conference P 1.31 (2011)
3. Y. Otsuka, et al, Jpn. J. Appl. Phys., 49 111501 (2010)
4. Mc Clure, et al, pp. 1-132 in Treatise on Solid State Chemistry, Vol. 2. Edited by N.B. Hannay. Plenum Press, New York, 1988